| 摘要 |
PURPOSE:To cut down the manufacturing processes while facilitating the recovery of crystallinity by a method wherein a silica film layer and an SiO2 film are formed and then the silica film layer is left only on the regions to be formed into N<+>buried and diffused layers by a selective etching process. CONSTITUTION:A silica film 22 containing N type impurity is coated on the surface of a semiconductor substrate 21 by spin-coating process or CVD process; then an oxide film such as an SiO2 film 23 is formed by CVD process etc; and the oxide film 23 and the silica film 22 are removed by photolithoetching process leaving only the regions to be formed into N<+>diffused layers. Next, P<+> diffused layers 25 are formed by implanting impurity such as B<+> etc., in the parts with the silica film 22 and the oxide film 23 removed therefrom by ion implantation process. Through these procedures, the processes can be cut down while facilitating the recovery of crystallinity.
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