| 摘要 |
PURPOSE:To attain the low power consumption and high speed drive of a capacitive load simultaneously by using a Schottky barrier diode of a buffer stage so as to level-shift an output of a switch stage, passing a discharge current of the load capacitance through a specific MESFET and reducing the logic amplitude. CONSTITUTION:A switch stage 21 has a switching Schottky field effect transistor MESFET 11 for switching whose gate receives an input signal and a load whose one terminal is connected to a drain of the MESFET 11. On the other hand, the 1st MESFET 14 whose gate receives an output signal of the switch stage 21, whose drain is connected to the other terminal of the load, a Schottky barrier diode D whose anode is connected to the source of the 1st MESFET 14, a constant current source MESFET 15 whose drain is connected to the cathode of the diode D, and the 2nd MESFET 27 whose drain and gate are connected to the anode and cathode of the diode D, are provided. Thus, the low power consumption and the high speed drive of the capacitive load are attained simultaneously. |
