| 摘要 |
PURPOSE:To make the mutual conductance gm larger by a method wherein an i-type InGaAs channel layer and a carrier feeding layer consisting of a distorted super lattice of AlAs/AlInAs containing impurity are formed are formed on an InP substrate. CONSTITUTION:A channel layer (channel layer 2 consisting of In0.53Ga0.47As) of i-type InGaAs formed on a substrate of InP (substrate 1 of InP), and a carrier feeding layer [electron feeding layer 3 of a distorted super lattice (super doped structure) consisting of AlAs/n-In0.52Al0.48As] consisting of AlAs(AlAs layer) and InAlAs containing impurity (n-type In0.53Al0.48 layer) formed on the channel layer are provided. Therefore, a gap is made to be wide in effect and the band discontinuity between the channel layer consisting of In0.53Ga0.47As and the carrier feeding layer is made to be larger, so that higher carrier concentration ns can be obtained. By these processes, the mutual conductance gm can be made to be high. |
