| 摘要 |
<p>PURPOSE:To form a thermal resistor membrane as a lead wire membrane continuously in the same reaction chamber by using a high melting point metal as a thermal resistor and a mixture of the same metal used for the thermal resistor and an insulation material as lead wire. CONSTITUTION:An electrode 31 is composed of a high melting point metal which constitutes a thermal resistor layer 3 such as Ti, and a substrate 5 containing a glazed layer 4 is formed on an electrode 32. When silicon oxide is used as an insulation material, SiH4+CO2 is introduced into a container as a source gas, and Ar gas is added with the addition of a high frequency electric field to the electrode 31. At that time, a membrane is formed under pressure which causes a material for the electrode to be sputtered. The introduced gas is evaporated on the substrate as silicon oxide, and at the same time, Ti is deposited on the substrate with the mixture of gas and a material for electrode adhesively setting on a substrate 34. Next, only Ti is allowed to deposit on the substrate 34 to form an electrode 2 which works as lead wire by stopping the supply of the source gas.</p> |
