| 摘要 |
PURPOSE:To eliminate the formation of a high resistance layer on a regrown boundary and the difficulty of a regrowth by disordering the superlattice structure of a superlattice structure clad layer except a stripe by heat treating by means of impurity diffusion from a current narrowing layer. CONSTITUTION:After a current narrowing layer is formed in a buried shape except a stripe on a substrate 1, a clad layer 4, an active layer 5, a clad layer 6 and a cap layer 7 of a superlattice structure are sequentially grown on the substrate 1. Then, the superlattice structure of the layer 4 is then disordered by heat treating except the stripe by means of an impurity diffusion from the narrowing layer. Accordingly, the step of regrowing on a crystal layer having high mixed crystal ratio of exposed aluminum is eliminated. Thus, a high resistance layer is not formed on a regrown boundary and the difficulty of regrowth is eliminated.
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