发明名称 PRODUCTION OF THIN FILM BY CVD AND DEVICE THEREFOR
摘要 PURPOSE:To easily and efficiently produce a thin film having desired properties by radiating stimulating light on the gaseous reactant adsorbed on a substrate as a solid phase or a liq. phase, and locally radiating heating light simultaneously or slightly earlier. CONSTITUTION:The substrate S placed on the substrate holder 4 provided with a cooler 10 is cooled in the evacuated sample chamber 1 of the airtight housing 2 furnished with an evacuator 9. As a result, the gaseous reactant supplied from an inlet pipe 8 is adsorbed on the substrate S in a solid phase or a liq. phase phase. The stimulating light W is radiated on the whole or a part of the surface of the substrate S from a stimulating light source 5 through an optical system 6 and a window 7. In addition, the heating light E from a heating light source 11 is locally radiated on the position irradiated with the stimulating light W through an optical system 12 and the window 7 simultaneously with or slightly earlier than the irradiation of the stimulating light W. By this method, the chemical reaction of the a sorbed gaseous reactant is caused by the irradiation of the stimulating light W, the reaction product is immediately reformed by the heating light E, and the thin film having desired properties is formed in one stage.
申请公布号 JPS63310967(A) 申请公布日期 1988.12.19
申请号 JP19870146696 申请日期 1987.06.12
申请人 NIKON CORP 发明人 KATSURAI KUMIKO
分类号 B01J19/12;C23C16/48 主分类号 B01J19/12
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