发明名称 |
OXIDE SUPERCONDUCTING ELEMENT WAFER |
摘要 |
PURPOSE:To provide an element wafer having a layer of crystals of a multicomponent oxide superconductor by forming a multicomponent oxide superconducting crystal layer on a substrate consisting of a two component oxide contg. metal element different to the elements constituting said crystal layer. CONSTITUTION:For example, a soln. 22 contg. powder of Y2O3 and powder of CuO dissolved in a flux comprising a liquid mixture of BaCO3 and B2O3 is prepd in a Pt crucible 21 of a liquid phase growth device. An LiTaO3 crystal substrate 23 is held by a holder 25 provided to a tip end of a supporting rod 24 which is allowed to contact with the soln. 22. Liquid epitaxial growth is proceeded by revolving the crystal substrate 23 at high speed at a specified cooling rate. By this method, an epitaxial wafer having a uniform YBa2Cu3O7-delta single crystal layer 27 formed with a specified thickness on the LiTaO3 crystal substrate 23 is obtd. |
申请公布号 |
JPS63310796(A) |
申请公布日期 |
1988.12.19 |
申请号 |
JP19870145719 |
申请日期 |
1987.06.11 |
申请人 |
TOSHIBA CORP |
发明人 |
FUKUDA KATSUYOSHI;TERAJIMA KAZUTAKA |
分类号 |
C30B19/02;C30B29/22;H01B12/06;H01L39/12;H01L39/22;H01L39/24 |
主分类号 |
C30B19/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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