| 摘要 |
PURPOSE:To make consideration for the transfer of an unrequired pattern unnecessary, by including a photomask pattern whose pattern width is formed at width smaller than that of the transfer capacity of a pattern in a photolithographic process using the photomask in the arbitrary area of the photomask. CONSTITUTION:On a semiconductor substrate, an alignment pattern 5 with, for example, width of about 1-2mum is formed on the photomask so as to be positioned in the center of an alignment pattern 7. The positioning of the photomask 4 and the semiconductor substrate are completed by positioning the alignment pattern 5 of the photomask in the center of the alignment pattern 7. Exposure is completed by photo irradiation, however, since the resolution of a proximity exposure system is about 3mum, no transfer of the alignment pattern 5 of the mask formed at the width of 1-2mum is performed onto the photoresist 3, and a bonding pad opening pattern 6 is transferred as usual. In such a way, it is possible to form the mark, etc., whose transfer is not desired, at an arbitrary place. |
