| 摘要 |
PURPOSE:To prevent the deposition of a CdTe crystal on the inner wall of a chamber and to surely monitor the inside of the chamber by coating liq. B2O3 on the inner wall of the crystal growth chamber before the CdTe-based crystal is pulled up by the hot-wall method. CONSTITUTION:A CdTe crystal or a mixed crystal contg. CdTe is pulled up from the melt 2 of the raw material in the Cd vapor atmosphere while monitoring (by a view rod 10) the inside through the transparent wall of the chamber 1 for growing a crystal 6. In this case, liq. B2O3 is coated on the inner wall of the chamber 1 before the crystal is pulled up. Since the affinity of CdTe for liq. B2O3 is low, the deposition of CdTe on the inner wall of the chamber 1 (ordinarily made of quartz) is prevented, hence the wall is not clouded, and the inside of the chamber is most easily monitored.
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