| 摘要 |
<p>PURPOSE:To suppress short-circuit between a gate and a drain by extending the creeping distance between them, by applying etching on other films except a gate insulating film, removing the gate insulating film setting a resist film as a mask, and removing the resist film after forming an ITO layer. CONSTITUTION:A gate metal layer 2 is formed on a substrate 1 on one side of a pair of transparent insulating substrates, and after applying the etching according to a prescribed pattern, the gate insulating film, a semiconductor layer, and a metal layer are laminated, and a source electrode and a drain electrode 5 are formed by applying a selecting etching method according to a drain electrode and a source electrode patterns to be formed and removing the unrequired parts of the metal layer and the semiconductor layer. Next, the gate insulating film 2 which exposes its surface in an aperture part is removed setting the resist film 6 as the mask. And by removing the resist film 6 after forming the ITO layer, the unrequired part of the ITO layer 7 is lifted off. In such a way, it is possible to improve pressure proof and to reduce short- circuit defect.</p> |
