| 摘要 |
<p>PURPOSE:To thin film thickness and to reduce resistance, by constituting a drain electrode and a source electrode of a layer consisting of only a crystallite or a polycrystal n<+>Si. CONSTITUTION:In a can bus stepping connection system in which the gate electrode G of each thin film transistor is connected to corresponding scan buses SBn, SBn+1,..., and also, the drain electrode D is connected to scan bus lines SBn+1, SBn+2,... of next order, and also, the source electrode S is connected to the display electrode of a corresponding liquid crystal cell, the drain electrode D and the source electrode S are constituted of the crystallite or the polycrystal n<+>Si layer 7. In such a way, it is possible to obtain a staggered type thin film transistor capable of maintaining the resistance at a low level even when the film thickness of the source electrode S and the drain electrode D in a lower layer electrode.</p> |
