OXIDE SUPERCONDUCTING ELEMENT WAFER

摘要

PURPOSE:To provide an element wafer having a crystal layer comprising a multicomponent oxide superconductor by forming a crystal layer of the multicomponent oxide superconductor on a crystal substrate consisting of oxides of >=two kinds of metal element constituting the crystal layer. CONSTITUTION:For example, a soln. 22 contg. powder of Y2O3 and powder of CuO dissolved in a flux comprising a liquid mixture of BaCO3 and B2O3 is prepd. in a Pt crucible 21 of a liquid phase growth device. A BaCuO2 crystal substrate 23 held by a holder 25 provided to a tip end of a supporting rod 24 is allowed to contact with the soln. 22. Liquid epitaxial growth is proceeded while revolving the substrate 23 at high speed with a specified cooling rate. By this method, an epitaxial wafer having a uniform YBa2Cu3O7-delta single crystal layer formed with a specified thickness on the BaCuO2 crystal substrate is obtd.