| 摘要 |
PURPOSE:To enable fine processing and multilayer wiring for improving the degree of integration of an element by forming a polycrystalline silicon layer on a substrate directly or through an intermediate layer, coating the predetermined region of the silicon layer with a mask and changing the polycrystalline silicon layer except the predetermined region into an oxide layer through selective oxidation. CONSTITUTION:A SiO2 layer 12 is formed through selective oxidation while using a nitride film 11 as a mask. A section except regions, which must function as a gate, a source and a drain, is coated with a resist film 4, and the oxide film can be etched, but window sections 6 are bored to the regions, which must function as the source and the drain, by using an etching liquid resisting the process such as a fluoric acid group etching liquid in the polycrystalline silicon. A polycrystalline silicon layer 13 of low resistance containing a V family element impurity such as phosphorus and a nitride film 11 are formed to the whole main surface of the substrate 1, the nitride films 11 are left only to electrode contact sections for the source, the gate and the drain, the oxide layer 14 is formed through selective oxidation while an impurity is diffused to the source and drain regions and the polycrystalline silicon layer, and an N type layer 7 is formed. When the nitride films 11 are removed, an MOSFET can be completed. |
