| 摘要 |
PURPOSE:To obtain a fine pattern exposure method capable of accurate alignment, by utilizing the interference of light applying slits arranged on an exposure object and a sample stand, or a reflection pattern. CONSTITUTION:Slits 2, 5 are arranged on an exposure object 4 (wafer) and a sample stand 1, and a transferring stand 14 mounting the exposure object 4 can travel between the sample stand 1 and the exposure object 4. Under the sample stand 1, boxes 15 provided with a photosensor row 18 are fixed. An interfence pattern generated by the slit 5 of the exposure object 4 and the slit 2 of the sample stand 1 is obtained on the photo sensor row 8, and the position of the exposure object can be detected according to the information thereof, which is fed back to a driving system of the transferring stand 14 according to a prescribed sequence, and enable controlling the position of the exposure object 4. Thereby, a fine pattern exposure method can be obtained which enables detecting the position of an exposure object without depending on the optical magnification. |
