发明名称 FORMING METHOD FOR JUNCTION OF OXIDE SUPERCONDUCTOR
摘要 PURPOSE:To obtain a junction having excellent reproducibility and controllability and high performance and high quality by thermally treating the surface of a foundation electrode in a mixed gas containing oxygen as a pretreatment through which a tunnel barrier is formed. CONSTITUTION:The surface of a foundation electrode 2 is thermally treated in a mixed gas containing oxygen as a pretreatment through which a tunnel barrier 3 is shaped. The surface of the foundation electrode 2 is thermally treated in N2 or CnH2n+2 and a gas obtained by properly replacing H in CnH2n+2 with F, Cl or Br, or PCl3, BCl3, or SF6 or the mixed gas of these N2, CnH2n+2 and gas acquired by properly replacing H in CnH2n+2 with F, Cl, or Br and an inert gas such as Ar in order to shape the tunnel barrier 3. Accordingly, a junction having excellent reproducibility and controllability and high performance and high quality is acquired.
申请公布号 JPS63308979(A) 申请公布日期 1988.12.16
申请号 JP19870145913 申请日期 1987.06.11
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KATO YUJIRO;ASANO HIDEFUMI;TANABE KEIICHI;KUBO SHUGO;MICHIGAMI OSAMU
分类号 H01L39/24;C04B37/00;H01B13/00 主分类号 H01L39/24
代理机构 代理人
主权项
地址