| 摘要 |
PURPOSE:To improve reliability by melting back a GaAs layer through an LPE method and providing a process in which an AlzGa1-zAs optical guide layer, an AlyGa1-yAs active layer, an AlxGa1-xAs upper-side clad layer and a GaAs cap layer are formed onto a louver side clad layer exposed in succession. CONSTITUTION:A GaAs layer 37 is melted back through a liquid-phase epitaxial growth method (an LPE method), and the surface of a lower-side clad layer 35 is exposed. The surface of the lower-side clad layer 35 having a corrugation 33a after the shape of the corrugation 33 of the surface of an N-type GaAs substrate 31 can be exposed. An N-type AlzGa1-zAs optical guide layer 39 is grown onto the N-type AlxGa1-xAs lower-side clad layer 35 so that the surface is flattened through said LPE growth, and an AlyGa1-yAs active layer 41, a P-type AlxGa1-xAs upper-side clad layer 43 and a P-type GaAs cap layer 45 are grown successively from the layer 39 side onto the optical guide layer 39, Accordingly, second crystal growth, the growth of each layer of layers upper than the layer including the optical guide layer, can be conducted excellently, thus acquiring a laser having high reliability. |
