| 摘要 |
PURPOSE:To fuse a DFBLD (a distributed feedback type semiconductor laser) to a heat sink with excellent yield without damaging various characteristics by previously forming a clearance section in width of 10mum or more to a fusion material. CONSTITUTION:A heat sink for a semiconductor laser is composed of a base consisting of a thermal conductor and a fusion material shaped onto the surface of the base to a thin-film shape, and a clearance section in width of 10mum or more is formed to the fusion material. An active layer section 33 having a diffraction grating for a DFBLD 31 is conformed to a fusion-material clearance section 34 in the heat sink, and the fusion material 35 is melted at a high temperature. Since there is no fusion material 35 just under the active layer section 33 when the fusion material is fixed, the DFBLD 31 can be fused to the heat sink 36 in a P-side down manner without receiving stress-strain by the difference of the thermal expansion coefficients of the fusion material 35 and a semiconductor.
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