| 摘要 |
PURPOSE:To modulate a superconductive energy gap simply by composing a superconducting transistor of a superconductor I, a metallic or semiconductor layer changed into a superconductor by a proximity effect and a superconductor II in low carrier concentration. CONSTITUTION:In 3 is evaporated and formed onto a high temperature superconductive film (a superconductor II) 5 being shaped onto an MgO substrate through a sputtering method and having a YBa2CuO7-8 composition, and an Al2O3 insulating film 2 and an Nb thin-film (a superconductor I) are formed onto In 3 through the sputtering method in succession. Main electrode wirings are executed respectively to Nb and In, and a gate electrode is shaped to YBa2 CuO7-8 by Au. Accordingly, a superconductive energy gap can be modulated simply.
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