| 摘要 |
PURPOSE:To prevent the deterioration of a superconducting film characteristics due to high temperature heat-treating, and enable the low resistance contact with other conducting film and conducting layer, by constituting the wiring film and the connection between wiring layers of a semiconductor device by using a low resistance wiring film like a superconducting film, and a thin film which does not cause the deterioration in superconductive property. CONSTITUTION:On the main surface of a semiconductor substrate 1, the following are formed; an insulating film 2, a low resistance wiring film 4 constituted of a superconducting film or a material whose resistivity is smaller than or equal to 1X10<-6>OMEGAcm, thin films 3, 5 which do not react with the low resistance wiring film 4 at a high temperature and are excellent in adhesion, and an insulating film 6. Thereby, the change of film characteristics such as composition of a superconducting film which causes the deterioration of superconductive characteristics can be prevented. Further, low contact resistance with other conducting film and conducting layer is realized, and adhesion between a wiring layer and a conducting film and adhesion between conducting layers are improved.
|
