| 摘要 |
PURPOSE:To obtain a pattern correcting method which is effective when pattern deffects extend all over the mask pattern, by forming an X-ray resist film with a specified pattern by performing a trimming treatment after the X-ray resist film almost corresponding with a mask pattern to be corrected is formed. CONSTITUTION:An X-ray mask 1 to correct a mask pattern 4 is prepared, and a positive type resist film 5 sensitive to X-ray is spread thereon. After baking at a specified temperature, X-ray exposure on the whole surface is performed from the opposite surface to the adhered resist film 5. The X-ray resist film 5 subjected to the X-ray exposure is developed to eliminate the resist film of exposed part, and the whole remaining pattern of the X-ray resist film 5 is subjected to an additive trimming treatment. In the final process, unnecessary parts 4', 4' are eliminated by an etching treatment, and then the X-ray resist film 5 is eliminated by ashing and the like. As the result, the mask pattern 4 turns to a pattern of original desired width, and the shape correction for the mask pattern 4 is finished. Thereby, a pattern correcting method can be obtained. |
