| 摘要 |
PURPOSE:To obtain a low pressure vapor growth equipment improved in the uniformity of a thin film in batch, by providing a furnace tube with a plurality of gas feeding inlets and vacuum discharge vents. CONSTITUTION:A vacuum pump 4 and a furnace tube 1 are connected with a plurality of vacuum exhaust vents 3, 3..., and along the lengthwise direction of the furnace tube 1, a plurality of gas feeding inlets 2, 2... are arranged. At the time of vapor growth, gas is introduced from the plurality of gas feeding inlets 2, 2..., and a thin film is grown on a semiconductor substrate in the furnace tube 1. In the course of this process, by introducing gas from a plurality of vacuum exhaust vents 3, the gas atmosphere in the furnace tube 1 is made uniform, and a film excellent in uniformity in batch can be grown. The number of vacuum exhaust vents, vacuum pumps, and gas feeding inlets are freely selected, and the positions of vacuum discharge vents and gas feeding inlets also can be freely selected. Thereby, when the furnace tube is made large because the diameter of a wafer is made large, the gas atmosphere in the furnace tube can be made uniform, and the uniformity of thin film in batch can be improved.
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