| 摘要 |
<p>A coplanar die to substrate bond method wherein a plurality of die (14) are aligned on a silicon wafer substrate (10) in a predetermined relationship and a slurry of glass (24) is applied to bond them together. This occurs while either on a flat (20) or a grooved plate (22). When the silicon wafer substrate (10) and the plurality of die (14) are ready for firing, they are placed on a grooved plate (22) so that grooves (26) are below the glass (24) thereby decreasing the capillary force which commonly causes overflow. With reduced overflow, the bonding can be done at a higher temperature to reduce underflow. Because there is no underflow or overflow using this process, a greater degree of coplanarity is achieved thereby making future processing steps, such as the processing of interconnect lines, much easier to perform.</p> |
