| 摘要 |
PURPOSE:To produce submicron-rule patterns at a high throughput by a method wherein a pattern is formed of a first masking film, the pattern contains a vertical step with its side wall consisting of a pattern retained of a film-to-be- patterned, and then a second masking film is provided to cover the first masking film. CONSTITUTION:A first masking film 14 is attached to a film-to-be-patterned and is subjected to patterning, which results in a pattern containing a vertical step wherein the retained pattern of the film-to-be-patterned occupies the place of the side wall of the vertical step. Next, a second masking film 15 is attached to the surface including the vertical step and is vertically etched, after which the second masking film 15 is retained on the side wall of the first masking film 14. The first masking film 14 is then totally removed, and the second masking film 15 retained in the side wall position serves as a mask in the process of patterning the film-to-bepatterned. This design enables the formation of patterns of submicron-rule width at a high throughput.
|
