| 摘要 |
PURPOSE:To enable a ferroelectric thin film of the film quality having excellent insulating characteristic to be formed easily by giving the effect of annealing selectively to only the surface of a film under film formation without raising the substrate temperature. CONSTITUTION:In the process of forming a ferroelectric thin film by a sputtering method through causing a substrate 22 to pass over a plurality of targets 24, 25 periodically, the accumulation of film and the heat oxidation treatment are caused to proceed simultaneously by heating momentarily only the surface of a film being formed between the targets 24, 25 selectively by using an optical heating means, such as flash lamp 28. Accordingly, in the case, for example, of a substrate, on which a transparent metallic oxide film is formed in advance, the bonding strength between a constitutive metal atom under film formation and an oxygen atom can be improved without increasing the resistance of said transparent metallic oxide film. Thereby, a ferroelectric thin film of the film quality having excellent insulating characteristics can be obtained easily.
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