| 摘要 |
PURPOSE:To obtain an N type layer, whose crystal property is stable even though amphoteric impurities are used and to perform growing with a thin, uniform thickness, by separating a gallium arsenide substrate and a solution including silicon, keeping a high temperature, contacting both during the temperature decrease at a constant speed thereafter, and performing epitaxial growth. CONSTITUTION:An N type substrate 1 made of gallium arsenide is prepared as a substrate 4. A gallium solution including impurity sources of silicon and gallium arsenide is prepared as a solution 7. They are heated to 970 deg.C in a hydrogen atmosphere. They are made to remain intact for a specified time, and the saturation state of the gallium arsenide and silicon is confirmed. Thereafter, cooling is performed at a speed of 3 deg.C/ minute. At a time point B when 920 deg.C is obtained, a solution well 8 and a boat 6 are relatively moved, and the substrate 4 and the solution 7 are contacted. They are cooled under this state, and an N type layer 2 is formed. A P type layer 3 is formed by changing the temperature grade as required with a furnace under the same state. At this time, the amount of the gallium arsenide in the solution is made rather small. Then, the surface of the substrate is dissolved by 1.2-2.0mum when the substrate and the solution are contacted, and the thermal stress on the surface of the substrate can be removed. |
