| 摘要 |
<p>PURPOSE:To suppress the oscillation of a drain current by a method wherein the respective parts, which are located just under an operating region and just under a gate pad electrode, of a substrate are formed as an opposite conductivity type region or an inactive region. CONSTITUTION:An N<+> drain 13 and an N<+> source 14 holding an N-type operating region (channel part) 12 between them are provided in the surface layer of a GaAs semi-insulative substrate (compound semiconductor substrate) 11. Moreover, a gate electrode 15a to come into Schottky contact with the region 12, a gate pad electrode 15b connected to this electrode and a drain electrode 16 and a source electrode 17, which respectively come into contact by means of ohmic contact with the drain and the source, are formed on the surface of the substrate. Moreover, a P-type region (or inactive region) 20a and a P-type region (or inactive region) 20b are respectively provided right under the region 12, the drain 13 and the source 14 and right under the electrode 15b. Thereby, the modulation of a channel current is inhibited and the improvement of the level to inhibit the vibration of a drain current can be contrived.</p> |
