| 摘要 |
PURPOSE:To enable the unit size to be miniaturized by a method wherein a conductive channel is formed in a selfalignment manner using the second insulating layer and sidewalls as masks. CONSTITUTION:During the process of forming an N<+>type diffused region 8 in a P type well region 7, the surface of the N<+>type diffused region 8 need not be formed into square shape to be formed on overall surface in a region encircled by an insulating film 5 so that a resist may not be selectively formed by photoetching process. Furthermore, during the process of forming a recession 10, the recession 10 is formed by RIE in a selfalignment manner using sidewalls 9a and the insulating film 5 as masks and electrically connected to the P type well region 7 and the N<+>type diffused region 8 by forming an Al wiring 11 in the recession 10. Through these procedures, the allowance for the position slip made during the photoetching process can be made needless enabling the unit cell size to be miniaturized.
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