| 摘要 |
<p>PURPOSE:To attain a high performance and a high image quality by using a semiconductor device, where a polycrystal silicon film having (111) as main orientation is used as the active layer, to constitute at least one of active elements of a peripheral driving circuit part and a display part. CONSTITUTION:The number of picture elements in a display part 5 is essentially determined by characteristics of a multiplexer 9 and a division matrix switch 10 in a signal circuit, and the write time per picture element viewed from the signal side is determined by the characteristic of a thin film transistor (TFT) of the signal circuit. If a polysilicon TFT having (111) as main orientation is used to form the circuit, the write time is shortened and the number of lines on the signal side is increased because the degree of carrier migration is high and the turning-on characteristic is excellent. The clock frequency is raised and the number of lines on the scanning side is increased with respect to a scanning circuit 8, and thus, a high performance and a high image quality are attained.</p> |
