| 摘要 |
PURPOSE:To reduce the voltage dependency of the capacity value of a capacitor as well as to make it possible to use the capacitor in a highly precise circuit by a method wherein the capacitor is constituted by antiparallel connection of first and the second MOS capacitors. CONSTITUTION:The title semiconductor integrated circuit has the capacitor on which the first MOS capacitor 13, containing the gate insulating film 10-1 provided on the surface of a p-type silicon semiconductor substrate 1, the conducting film 11-1 consisting of polycrystalline silicon provided on the gate insulating film 10-1, and n<+> type regions 8-1 and 8-2 selectively provided on the part adjoining to the section directly under the conductive film 11-1 on the surface of the p-type semiconductor substrate 1, and the second MOS capacitor 14 (consisting of a gate insulating film 10-2, a conductive film 1102 and n<+> type regions 8-3 and 9-4) of substantially same shape as the capacitor 13 are connected in parallel in different directions with each other. As a result, the effect of the bias voltage in the neighborhood of zero point can be reduced. |
