| 摘要 |
<p>A semiconductor switching element including a FET and transmission line (11, 13) whereby the transmission line is mounted around the active channel (15) of the FET with a gate electrode stripe (17) therebetween. The transmission line (11, 13) is thus capable of being short-circuited to earth by application of a suitable electrical potential to the gate electrode. This allows construction of a microwave phase shift circuit which makes maximum use of the available area of semiconductor material.</p> |
