| 摘要 |
PURPOSE:To improve production efficiency by forming a thin film for charge conversion on a substrate, forming an etching mask pattern corresponding to a charge conversion film on the rear face of the substrate, and etching the substrate to form the plural charge conversion films and thin film supporting plate. CONSTITUTION:A silicon carbide film A is formed to <=10mug/cm<2> thickness by CVD, etc., on the circular silicon substrate B. A resist is then coated on the rear face of the substrate B and is partly removed by photolithography to the prescribed pattern to form the etching mask C. The substrate B is then selectively etched through the mask pattern by using a soln. mixture composed of hydrofluoric acid, nitric acid, etc. The silicon dissolves in the solvent at this time but the silicon carbide does not dissolve in the solvent and, therefore, the thin film A remains on the surface of the substrate B. All the resists existing on the rear face of the substrate B are removed by using an org. solvent. The apertures D of the substrate B constitute the charge conversion films and the part E remaining without being etched constitutes the thin film supporting plate. The production efficiency is thereby improved.
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