| 摘要 |
PURPOSE:To prevent the occurrence of voids due to air bubbles trapped in an insulating layer in the fine gaps between wirings by performing a heat treatment (reflow process) for planarizing the surface of the interlayer insulating layer in a high-pressure helium atmosphere. CONSTITUTION:To a high-pressure vessel 1 made of stainless steel, a gas introducing pipe 2 and a gas exhaust pipe 3 are connected respectively through a cut-off valve 4 and a pressure regulator valve 5, and a semiconductor substrate 6 received in a holder 7 is placed in the center of the high-pressure vessel 1. On the surface of the semiconductor substrate 6, a film to be subjected to a planarization heat treatment is formed which is made of phosphosilicate glass or the like, and around the holder 7, a heater 8 is provided for heating the semiconductor substrate 6. And the glass layer of the phosohosilicate or borophosphosilicate system produced on the semiconductor chip surface having a plurality of wirings arranged at fine intervals is heated in a high-pressure atmosphere so as to reflow. With this, the occurrence of voids in the insulating layer consisting of the phosphosilicate or borophosphosilicate system glass layer in the gaps between the wirings is prevented.
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