| 摘要 |
PURPOSE:To remove progressive defects by providing a check element comprising a metal wiring crossing a step section corresponding to a step section of an insulating film which is made at the time of forming a chip, thereby preventing a misjudgement. CONSTITUTION:On an insulating film 4 composed of silicon oxide or PSG having a step section 1 and provided on the surface of a semiconductor substrate 5, a metal wiring check element is provided which comprises a metal wiring 2 consisting of the aluminium of a fixed width and crossing the step section 1, and metal pads 3-1, 3-2 respectively provided on both ends of the metal wiring 2. This step section has a step corresponding to the maximum step section of the semiconductor device main body. And probes are held to the metal pads 3-1, 3-2 to measure the electrical resistance. With this, the defects of the metal wiring (breaking at the step, thinning, constriction) can be detected.
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