发明名称 MOCVD DEVICE FOR PREPARING THIN FILM OF HIGH-TEMPERATURE SUPERCONDUCTOR
摘要 PURPOSE:To produce a large-area thin film of a superconductor having a uniform film compsn. and film thickness by disposing a gaseous org. metal compd. guiding pipe in the form of a multiple concentrical type around an oxygen-contg. gas guiding pipe and mixing both gases just before a substrate. CONSTITUTION:The oxygen-contg. gas guiding pipe 7 is inserted into the center of a reaction tube 2 and the gaseous org. metal compd. guiding pipe 3 is disposed in the form of the multiple concentrical type. A gas introducing pipe 1 is connected to the gaseous org. metal compd. guiding pipe 3 and the gaseous org. metal compd. [La(C5H5)3, Sr(C5H5)2, Cu(acac)2] is introduced into the reaction tube 2. The reaction tube 2 is heated by a heater 8 to prevent the condensation of the gas to the tube wall. Inert gases are introduced from a gas introducing pipe 4 and the oxygen-contg. gas is discharged in front (about 10-20cm) of the substrate 5 heated by a heater 9 through the guiding pipe 7. The gaseous org. metal compd. and the oxygen-contg. gas are thereby quickly and uniformly mixed and the thin superconductive film having the uniform film compsn. and film thickness is formed on the substrate 5.
申请公布号 JPS63307276(A) 申请公布日期 1988.12.14
申请号 JP19870139967 申请日期 1987.06.05
申请人 KAWASAKI STEEL CORP 发明人 TAKAHASHI MAKOTO
分类号 B01J12/02;C23C16/40;C23C16/44;C23C16/455;C30B29/22;H01B13/00;H01L39/12;H01L39/24 主分类号 B01J12/02
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