| 摘要 |
PURPOSE:To prevent a latchup from occurring by providing an insulated gate bipolar transistor and a monitor element for monitoring the operation current of a transistor on a semiconductor substrate. CONSTITUTION:The emitter electrode 9 of an insulated gate bipolar transistor element (IGBT element) 2' of part of many IGBT elements 2 connected in parallel is connected by wire bonding to a monitor terminal M. When the remaining emitter electrodes 9 are connected by wire bonding to emitter terminals E, the bonding wirings are further extended from the terminal E to emitter terminal EM, and the electrode 9 is connected to both the terminals E and EM. An external resistor R is connected between the terminals M and EM to monitor the main current IC of an IGBT unit 1 by the potential difference presented across the resistor R. |
