| 摘要 |
PURPOSE:To form a good ohmic contact by a method wherein a selfheating operation by an eddy current and a cooling operation of an uppermost layer by a cooling gas are executed simultaneously so that a uniform surface state can be obtained. CONSTITUTION:A gas supply part 23 which feeds a cooling gas G to the inside of a heating device 20 is connected to the device 20. A high frequency is fed to heating coils 22 from a high-frequency power supply 24; a magnetic field H perpendicular to each main face of wafers 10 is generated. Then, an eddy current is generated at multiple metal layers 11 ; the metal layers 11 are self- heated due to a loss of resistance; an ohmic contact is formed. Because Au is an uppermost metal layer is cooled by the cooling gas G, it is not melted. By this setup, a uniform surface state is obtained, and the good ohmic contact is formed. |
