| 摘要 |
<p>A dynamic memory device of one-transistor memory cell type is disclosed. A thick insulating layer (50) is formed on the transistor (34,56,22) and an aperture (51) is provided in the thick insulating layer to reach source (34) or drain region (22) of the transistor. A MOS type storage capacitor is formed within the aperture (51) and above the upper surface (50 min ) of the insulating layer such that the capacitance of the capacitor within the aperture becomes larger than the capacitance of the capacitor above the upper surface of the insulating layer.</p> |
