发明名称 Boundary-free semiconductor memory device having a plurality of slide access memories.
摘要 <p>A plurality of slide access memories (SM00 , SM01 , ..., SMn-1, m-1), in which a voluntary rectangular group of bits can be accessed, are arranged in an n-rows and m-columns matrix and connected to common data lines (D0 , D1 , ..., D15). A first access means accesses the same rectangular group of bits in each of the slide access memories and interconnects these groups to input/output portions incorporated into each of the slide access memories. A second access means selects the input/output portions of each of the slide access memories to enable or disable the operation thereof in accordance with a special bit position, or a pointing bit (PB) position, to thereby connect only a desired group of bits to common data lines, and thus enlarge the scope of slide access memories.</p>
申请公布号 EP0295186(A2) 申请公布日期 1988.12.14
申请号 EP19880401439 申请日期 1988.06.10
申请人 FUJITSU LIMITED 发明人 MASUDA, YUSUKE;OGAWA, JUNJI
分类号 G06T1/60;G11C11/413;G11C8/12 主分类号 G06T1/60
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