| 摘要 |
PURPOSE:To reduce a contact resistance by forming a metal silicide layer on an Si substrate formed with a natural oxide film with respect to an opening in a self-aligning manner. CONSTITUTION:The surface of an Si substrate 1 having a natural oxide film 7 on the surface of an opening and the ohmic contact of an upper semiconductor layer form a preferable buried contact. In this case, it is so covered with a lower metal layer 8 made of high melting point metal as to destroy the film 7, the layer 8 is covered in vacuum with an upper metal layer 8 made of high melting point metal, and annealed in a gas atmosphere containing oxygen. A semiconductor layer containing impurity is formed on the silicide layer of the layer 9 through the steps of silicide reacting the substrate 1 with both the layers 8, 9 and etching the unnecessary metal layer in a self-aligning manner, heat treated and doped with impurity in the substrate 1.
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