| 发明名称 |
GALLIUM ARSENIDE SINGLE CRYSTALS, AND PROCESS FOR THE PREPARATION THEREOF |
| 摘要 |
Undoped GaAs single crystals with low dislocation density, low impurity content, 0.20-1 Kg in weight and constant diameter of 1''-2'' (inches), said single crystals being obtained with LEC technology at low or high pressure with synthesis of the polycrystal in situ and subsequent growth of the single crystal. |
| 申请公布号 |
EP0206541(A3) |
申请公布日期 |
1988.12.14 |
| 申请号 |
EP19860304008 |
申请日期 |
1986.05.27 |
| 申请人 |
MONTEDISON S.P.A.;CONSIGLIO NAZIONALE DELLE RICERCHE |
发明人 |
MATTERA, ADRIANO;FORNARI, ROBERTO;MAGNANINI, RENOTA;PAORICI, CARLO;ZANOTTI, LUCIO;ZUCCALLI, GIOVANNI |
| 分类号 |
C30B29/42;C30B15/00;C30B27/02;H01L21/18;H01L21/208 |
主分类号 |
C30B29/42 |
| 代理机构 |
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