| 摘要 |
A capacitive structure (40) comprises a group of capacitive layers of equal width, each including a dielectric substrate (42) and a metallic area (44), which covers a major portion of an upper surface of the dielectric substrate (42) and which extends to one edge of the dielectric substrate (42), a mass of conductive material (70, 74) covering each edge of the layer to provide electrical connections to and between the metallic areas (44) extending to the edges. The metallized areas (44) on alternate layers extend to opposite edges. A group of at least three dielectric layers (56) of equal width, is stacked on the top of one another, and covers the group of capacitive layers. Preferably a group of at least three dielectric layers (58) of equal width, is stacked on top of one another and is beneath the group of capacitive layers. Alternate ones of the layers of each group are offset laterally so that indentations (50, 52, 60, 62, 64, 66) are formed along each edge whereby the conductive masses (70, 74) which substantially fill the indentations (50, 52, 60, 64, 66), bond the capacitive (42) and dielectric (56, 58) layers tightly to each other. Additionally, a covering tape (78) may be adhesively applied to the top. |
