METHOD OF EPITAXIALLY GROWING GALLIUM ARSENIDE ON SILICON

摘要

Two-step process of expitaxially growing gallium arsenide on a silicon substrate. A silicon substrate is heated to about 450 DEG C in a reaction chamber and arsine and triethylgallium are introduced into the chamber. After a thin seed layer of gallium arsenide is grown at a relatively slow rate, the silicon substrate is heated to about 600 DEG C and a thick buffer layer of gallium arsenide is grown at a relatively fast rate.