| 摘要 |
PURPOSE:To prevent oxidation of a target surface and the decrease of the film forming speed by using a conductive pipe as a reactive gas introducing pipe of a reactive sputtering apparatus, providing a wire-shaped electrode in the pipe to ionize the reactive gas and moving the ions toward a substrate for film formation. CONSTITUTION:The introducing pipe 10 for gaseous O2 as the reactive gas is made of a conductive material and the wire-shaped electrode 11 is inserted therein. At the time of supplying gaseous Ar from an introducing pipe 9 of the reactive sputtering apparatus and the gaseous O2 as the reactive gas from the introducing pipe 10, generating plasma between the target 3 and the substrate 5 for film formation, and bringing the charged Ar particles into collision against the target 3 to form the oxide film of the target material on the substrate 5, the gaseous O2 is ionized by a power supply 13 and released from many small holes 12 of the introducing pipe 10 so provided as to surround the substrate 5 near the place above the substrate 5 without directing toward the target 3 and oxidizing the target 3. The decrease in the speed of forming the film on the surface of the substrate 5 by the oxidation of the target is, therefore, prevented.
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