| 摘要 |
PURPOSE:To provide the title molecular beam source by constituting the crucible divided into the upper and the lower parts so that only the lower part can ascend and descend to keep the melt surface of the starting material almost constant in the crucible, whereby an epitaxial film of uniform thickness is produced using molecular beams. CONSTITUTION:The lower crucible Q is positioned lowermost and the crucible 1 is filled with the starting materials. Then, the molecular beam source cell 24 is set to the crystal growth chamber 20, and the chamber 20 is vacuumed in combination of baking. The base 29 is fixed to the holder 28 and transferred from the outside through the vacuum chamber into the chamber 20 and set to the manipulator 26. The base 29 is heated with the heater 27 and irradiated with molecular beams from the suitable source cells 24, 24 to effect epitaxy of the base 29. Since the melt level comes down, as epitaxial growth is repeated, the direct introducer 13 is driven to lift up the lower crucible Q is allowed to move up to lift the melt level so that the level is kept constant.
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