| 摘要 |
PURPOSE:To obtain a good semiconductor recrystallized layer of a large area by a method wherein an energy beam is irradiated in a direction parallel to a stripe direction of a grating and in a direction perpendicular to the stripe direction and an annealing operation is executed so that a temperature distribu tion inside a semiconductor layer can be controlled ellectively. CONSTITUTION:Two or more stripe-shaped parallel grooves, i.e. gratings 24, reaching an insulating layer from the side of a second W film 22 of a protective film 16 are formed. After the gratings 24 have been formed by an etching opera tion from the surface of the second W film 22, a resist pattern 26 is removed and the protective film 16 with the gratings is obtained. While an energy beam is irradiated from a direction perpendicular to a face of the protective film 16, it is scanned principally along a stripe direction of the gratings 24. In addi tion, while the beam is scanned secondarily in a direction perpendicular to the direction, a whole area of a semiconductor layer 14 to be recrystallized is annealed, and the semiconductor layer 14 is zone-melted and a recrystallized. By this setup, a good semiconductor recrystallized layer with a large area can be obtained.
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