发明名称 SPUTTERING TARGET
摘要 PURPOSE:To prevent the breakage of target pieces caused by heat, by forming interstices of the prescribed width at respective laterals sides of neighboring target pieces on the side to be exposed to plasma at the time of forming a mosaic target by using plural materials different in composition. CONSTITUTION:Target pieces 2 consisting of the pieces of high-m.p. metal, such as Mo, are combined with target pieces 3 consisting of practically wedge- shaped silicon pieces so that interstices 7 (about 200mu) are provided to the positions between respective laterals end sides of the target pieces 2, 3 on the side to be exposed to plasma, by which a disklike mosaic target is prepared. This mosaic target is placed on a backing plate 6 made of copper as a supporting substrate and fixed on the backing plate 6 by means of an inside- peripheral ferrule 4 and an outside-peripheral ferrule 5. At this time, a discoid Mo sheet 8 is provided to the part between the target pieces 2, 3 and the backing plate 6. By this method, no breakage occurs in the silicon pieces even if temp. is raised in the course of sputtering, and, as a result, the formation of dust can be prevented.
申请公布号 JPS63307265(A) 申请公布日期 1988.12.14
申请号 JP19870140599 申请日期 1987.06.04
申请人 TOSHIBA CORP;TOKUDA SEISAKUSHO LTD 发明人 KAWAGUCHI TATSUZO;YAMAZAKI TOSHINARI;KUMAGAI KENJI
分类号 C23C14/34 主分类号 C23C14/34
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