| 摘要 |
PURPOSE:To prepare a device having high performance and a high function by depositing a single crystal insulating film, a lattice constant of which coincides with Si, onto single crystal Si. CONSTITUTION:SOI structure in which a growth layer 2 consisting of a single crystal insulating film, a lattice constant of which coincides with that of an Si substrate 1, is formed onto the Si substrate 1 is used. A parasitic P-N-P transistor is not shaped in the presence of the growth layer 2, the single crystal insulating thin-film. The SOI structure has an advantage where a latch-up phe nomenon which has been at issue in conventional bulk MOS transistors is not generated. Accordingly, the single crystal insulating film having high quality can be deposited onto Si, and a high-quality Si layer not misfitted can be hetero- epitaxial grown onto the single crystal insulating film.
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