摘要 |
PURPOSE:To increase practical numerical aperture and to improve the detecting sensitivity, by providing a V-shaped groove so that light beams applied to a transferring section which otherwise are not utilized (detected) can be guided to a photodetector. CONSTITUTION:When incident infrared rays are projected on the rear face 11b, the rays applied onto the regions (A) as indicated in the figure are transmitted by a p-type Si substrate 11 and reach Schottky electrodes 12 serving as a photodetector, by which they are converted photoelectrically. On the other hand, the rays applied onto the regions (B) are refracted at inclined faces 17a, transmitted obliquely through the p-type Si substrate 11 and also reach the Schottky electrodes 12 by which they are converted photoelectrically, in a similar manner to those of the regions (A). In a solid state image sensing device provided with V-shaped grooves 17, Approximately all of the incident infrared rays are allowed to reach the photodetectors, regardless of which part of the rear face 11b they are applied to. In other words, the device has numerical aperture of substantially 10%. Accordingly, the sensitivity as well as the S/N ratio of the device are improved remarkably.
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