| 摘要 |
A process for forming high resolution resist patterns using a positive type resist material comprising a photoactive resin having phenolic hydroxyl groups, an organic solvent, and 5 to 50% by weight of trimethylsilylnitride. The process for forming high resolution mask patterns comprises the steps of forming a first resist layer on a wafer for planarizing the wafer surface, forming a second resist layer on said first resist layer by using the positive type resist material mentioned above wherein the first resist layer has a higher plasma etch rate than the second resist layer, exposing and removing the second resist layer so as to form a mask pattern, and subjecting the mask pattern and the first resist layer to a reactive ion etching so as to removce the first resist layer by using the mask pattern as an etching mask.
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