| 摘要 |
PURPOSE:To improve the life of a film, by arranging a charge conversion film composed of a single crystal thin film free from decomposition by a high- temperature heating/cooling cycle to prevent destruction of a film otherwise caused by the passage of an ion beam through a charge conversion film. CONSTITUTION:A resist (b) is applied on a silicon single crystal substrate (a) and the resist is removed at a specified part (c) by photolithography. Then, with the resist (b) as mask, the substrate is etched by a mixed liquid of hydrofluoric acid and nitric acid. As the etching progresses, the substrate becomes thinner gradually at the part (c) with no resist and the etching ends when the substrate reaches the thickness of 10mug/cm<2> or less at a part (d) thereof. Thereafter, when the resist left on the substrate is removed completely by an organic solvent, the part (d) makes up a charge conversion film of a single crystal and the part (e) left as intact from the etching is used as support part of the film.
|
